complementary silicon plastic power transistors . . . designed for use in general ? purpose amplifier and switching applications. ? dc current gain specified to 15 amperes ? h fe = 20 ? 150 @ i c = 5.0 adc = 5.0 (min) @ i c = 15 adc ? collector ? emitter sustaining voltage ? v ceo(sus) = 60 vdc (min) ? 2n6487, 2n6490 = 80 vdc (min) ? 2N6488, 2n6491 ? high current gain ? bandwidth product f t = 5.0 mhz (min) @ i c = 1.0 adc ? to ? 220ab compact package these devices are available in pb ? free package(s). specifications herein apply to both standard and pb ? free devices. please see our website at www.onsemi.com for specific pb ? free orderable part numbers, or contact your local on semiconductor sales office or representative. ??????????????????????? maximum ratings (1) ??????????? ? ????????? ? ??????????? rating ????? ? ??? ? ????? symbol ???? ? ?? ? ???? 2n6487 2n6490 ???? ? ?? ? ???? 2N6488 2n6491 ??? ? ? ? ??? unit ??????????? ??????????? collector ? emitter voltage ????? ????? ???? ???? ???? ???? ??? ??? ??????????? ??????????? ? base voltage ????? ????? ???? ???? ???? ???? ??? ??? ??????????? ??????????? ? base voltage ????? ????? ??????? ??????? ??? ??? ??????????? ??????????? ????? ????? ??????? ??????? ??? ??? ??????????? ????? ??????? ??? ??????????? ? ????????? ? ??????????? total power dissipation @ t c = 25 c derate above 25 c ????? ? ??? ? ????? p d ??????? ? ????? ? ??????? 75 0.6 ??? ? ? ? ??? watts w/ c ??????????? ? ????????? ? ??????????? total power dissipation @ t a = 25 c derate above 25 c ????? ? ??? ? ????? p d ??????? ? ????? ? ??????? 1.8 0.014 ??? ? ? ? ??? watts w/ c ??????????? ??????????? ????? ????? ??????? ??????? ??? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? thermal resistance, junction to case ????? ????? jc ?????? ?????? ??? ??? c/w ???????????? ???????????? ????? ????? ja ?????? ?????? ??? ??? c/w (1) indicates jedec registered data. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2006 march, 2006 ? rev. 11 1 publication order number: 2n6487/d 2n6487 2N6488 2n6490 2n6491 *on semiconductor preferred device 15 ampere complementary silicon power transistors 60 ? 80 volts 75 watts * * case 221a ? 09 to ? 220ab npn pnp style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
2n6487 2N6488 2n6490 2n6491 http://onsemi.com 2 80 40 20 0 20 40 80 100 120 160 figure 1. power derating t c , case temperature ( c) p d , power dissipation (watts) 60 t a t c 4.0 2.0 1.0 3.0 0 60 140 t a t c 0
2n6487 2N6488 2n6490 2n6491 http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector ? emitter sustaining voltage (1) (i c = 200 madc, i b = 0) 2n6487, 2n6490 2N6488, 2n6491 ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 60 80 ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector ? emitter sustaining voltage (1) (i c = 200 madc, v be = 1.5 vdc) 2n6487, 2n6490 2N6488, 2n6491 ????? ? ??? ? ? ??? ? ????? vcex ??? ? ? ? ? ? ? ??? 70 90 ???? ? ?? ? ? ?? ? ???? ? ? ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 30 vdc, i b = 0) 2n6487, 2n6490 (v ce = 40 vdc, i b = 0) 2N6488, 2n6491 ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 1.0 1.0 ??? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 65 vdc, v eb(off) = 1.5 vdc) 2n6487, 2n6490 (v ce = 85 vdc, v eb(off) = 1.5 vdc) 2N6488, 2n6491 (v ce = 60 vdc, v eb(off) = 1.5 vdc, t c = 150 c) 2n6487, 2n6490 (v ce = 80 vdc, v eb(off) = 1.5 vdc, t c = 150 c) 2N6488, 2n6491 ????? ? ??? ? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ? ? ? ??? ? ? ? ? ???? ? ?? ? ? ?? ? ? ?? ? ???? 500 500 5.0 5.0 ??? ? ? ? ? ? ? ? ? ? ??? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 5.0 adc, v ce = 4.0 vdc) (i c = 15 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 5.0 ???? ? ?? ? ???? 150 ? ??? ? ? ? ??? ? ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector ? emitter saturation voltage (i c = 5.0 adc, i b = 0.5 adc) (i c = 15 adc, i b = 5.0 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 1.3 3.5 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base ? emitter on voltage (i c = 5.0 adc, v ce = 4.0 vdc) (i c = 15 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? ? ? ???? ? ?? ? ???? 1.3 3.5 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current ? gain ? bandwidth product (2) (i c = 1.0 adc, v ce = 4.0 vdc, f test = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 5.0 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz ?????????????????????? ?????????????????????? ? signal current gain (i c = 1.0 adc, v ce = 4.0 vdc, f = 1.0 khz) ????? ????? ??? ??? ???? ???? ??? ??? 300 s, duty cycle 2.0%. (2) f t = |h fe | ? f test .
2n6487 2N6488 2n6490 2n6491 http://onsemi.com 4 figure 2. switching time test circuit 1000 figure 3. turn ? on time i c , collector current (amp) t, time (ns) 500 50 20 0.2 20 t c = 25 c v cc = 30 v i c /i b = 10 10 1.0 5.0 t r 0.5 2.0 10 200 100 t d @ v be(off) 5.0 v npn pnp + 10 v 0 scope r b ? 4 v t r , t f 10 ns duty cycle = 1.0% r c d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 25 s ? 10 v d 1 51 r b and r c varied to obtain desired current levels. for pnp, reverse all polarities. v cc + 30 v figure 4. thermal response t, time (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k 500 z jc (t) = r(t) r jc r jc = 1.67 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.05 0.02 0.01 single pulse 0.1 r(t), transient thermal resistance (normalized) second breakdown limited bonding wire limited thermally limited @ t c = 25 c 20 figure 5. active ? region safe operating area 2.0 10 20 80 t j = 150 c 0.2 5.0 0.5 v ce , collector?emitter voltage (volts) 10 40 1.0 0.1 dc 2.0 60 4.0 2n6487, 2n6490 2N6488, 2n6491 curves apply below rated v ceo 5.0 ms 1.0 ms 500 s 100 s i c , collector current (amp) there are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown
2n6487 2N6488 2n6490 2n6491 http://onsemi.com 5 c, capacitance (pf) 300 v r , reverse voltage (volts) 1.0 2.0 5.0 20 10 200 100 70 50 c ib c ob 50 0.5 figure 6. turn ? off time i c , collector current (amp) t, time (ns) 0.2 5.0 1.0 2.0 20 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s 0.5 t f 5000 100 200 1000 500 50 npn pnp 10 figure 7. capacitances c ob npn pnp 700 1000 t j = 25 c
2n6487 2N6488 2n6490 2n6491 http://onsemi.com 6 v ce , collector?emitter voltage (volts) v ce , collector?emitter voltage (volts) 500 figure 8. dc current gain i c , collector current (amp) 0.5 0.2 10 1.0 2.0 100 50 h fe , dc current gain t j = 150 c 25 c ?55 c 200 20 20 npn 2n6487, 2N6488 pnp 2n6490, 2n6491 i c , collector current (amp) h fe , dc current gain t j = 150 c 25 c ?55 c 5.0 v ce = 2.0 v v ce = 2.0 v 10 5.0 0.5 0.2 10 1.0 2.0 20 5.0 500 100 50 200 20 5.0 10 5.0 100 i c = 1.0 a t j = 25 c 10 4.0 a 8.0 a 20 50 2000 1000 200 500 figure 9. collector saturation region 2.0 i b , base current (ma) 5.0 100 5000 1.8 1.6 1.4 1.2 i c = 1.0 a t j = 25 c 0 10 4.0 a 8.0 a 20 50 1.0 0.2 0.6 0.8 0.4 2000 1000 200 500 5000 2.0 1.8 1.6 1.4 1.2 0 1.0 0.2 0.6 0.8 0.4 i b , base current (ma) v ce(sat) @ i c /i b = 10 t j = 25 c v be @ v ce = 2.0 v 2.8 1.6 1.2 2.4 0 0.8 0.4 0.2 0.5 2.0 20 10 1.0 5.0 v be(sat) @ i c /i b = 10 2.0 i c , collector current (amp) v, voltage (volts) figure 10. ?on? voltages i c , collector current (amp) v, voltage (volts) v ce(sat) @ i c /i b = 10 t j = 25 c v be @ v ce = 2.0 v 2.8 1.6 1.2 2.4 0 0.8 0.4 0.2 0.5 2.0 20 10 1.0 5.0 v be(sat) = i c /i b = 10 2.0
2n6487 2N6488 2n6490 2n6491 http://onsemi.com 7 package dimensions case 221a ? 09 issue aa to ? 220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 2n6487/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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